Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MA4P504-30

MA4P504-30

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC_PKG,SI

75

SMP1331-087LF

SMP1331-087LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 750MW 2QFN

425039000

MA4P4301B-402

MA4P4301B-402

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC,AXIAL,HI-PAX

100

BA895H6327XTSA1

BA895H6327XTSA1

IR (Infineon Technologies)

PIN DIODE

9000

RN779DT146

RN779DT146

ROHM Semiconductor

RF DIODE PIN 50V SMD3

1958

LXP1002-23-4/TR

LXP1002-23-4/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

LXP1000-23-2/TR

LXP1000-23-2/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

BAT63-07WE6327

BAT63-07WE6327

IR (Infineon Technologies)

MIXER DIODE, LOW BARRIER

24000

SMS3922-001LF

SMS3922-001LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 8V 75MW SOT23

12356000

MML4401-GM3/TR

MML4401-GM3/TR

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC PLASTIC

0

MA4L022-134

MA4L022-134

Metelics (MACOM Technology Solutions)

RF DIODE PIN 35V CHIP

700

MSS30-142-E28

MSS30-142-E28

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, E28-S

75

MA4L022-186

MA4L022-186

Metelics (MACOM Technology Solutions)

RF DIODE PIN 35V CHIP

0

LXP1004-23-2/TR

LXP1004-23-2/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

300

LM501202-M-C-300-T

LM501202-M-C-300-T

Metelics (MACOM Technology Solutions)

MODULE,LIMITER,SURFACE MOUNT,CS3

120

NTE555

NTE555

NTE Electronics, Inc.

D-PIN VHF BAND SW

77

MADP-011104-TR3000

MADP-011104-TR3000

Metelics (MACOM Technology Solutions)

RF DIODE PIN 800V 12PQFN

5896

BAR6403WE6327HTSA1

BAR6403WE6327HTSA1

IR (Infineon Technologies)

RF DIODE PIN 150V 250MW SOD323-2

10462

MA4P505-36

MA4P505-36

Metelics (MACOM Technology Solutions)

CERAM PKG PINS,ODS36

50100

MSWSH-040-30

MSWSH-040-30

Metelics (MACOM Technology Solutions)

SWITCH,RF,2012 PKG

1000

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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