Diodes - RF

Image Part Number Description / PDF Quantity Rfq
PMBD353,215

PMBD353,215

Nexperia

RF DIODE SCHOTTKY 4V TO236AB

4655

MA4P1200NM-401T

MA4P1200NM-401T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 100V 1.5W AXIAL

52681000

MA4P504-1072T

MA4P504-1072T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 500V 7.5W

410

VS-C40CP07L-M3

VS-C40CP07L-M3

Vishay General Semiconductor – Diodes Division

SILICON CARBIDE DIODE - TO-247

498

1SS356TW11

1SS356TW11

ROHM Semiconductor

RF DIODE STANDARD 35V 200MW UMD2

839

1SS375-TL-E

1SS375-TL-E

SBD SERIES 35MA 10V

195000

MMPN080045

MMPN080045

Metelics (MACOM Technology Solutions)

DIODE,PIN-CHIP, C50

200

MEST2G-050-45

MEST2G-050-45

Metelics (MACOM Technology Solutions)

SWITCH,RF,QFN-2615

352

1SV246-TL-E

1SV246-TL-E

PIN DIODE

341000

MA4P1250-1072T

MA4P1250-1072T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 100V 6W

0

MA40215-276

MA40215-276

Metelics (MACOM Technology Solutions)

DIODE,SCHOTTKY,HI-REL,CERAMIC,SI

50

1SV307(TPH3,F)

1SV307(TPH3,F)

Toshiba Electronic Devices and Storage Corporation

RF DIODE STANDARD 30V USC

12163

CLA4606-085LF

CLA4606-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 75V 3W 3QFN

19410

1SV308,L3F

1SV308,L3F

Toshiba Electronic Devices and Storage Corporation

RF DIODE PIN 30V ESC

0

MMDB30-E28X

MMDB30-E28X

Metelics (MACOM Technology Solutions)

DIODE, BEAMLEAD SRD, E28X

48

MSWSSB-020-30

MSWSSB-020-30

Metelics (MACOM Technology Solutions)

RF DIODE 2012

219

LM200802-M-A-300-T

LM200802-M-A-300-T

Metelics (MACOM Technology Solutions)

LIMITER,SURFACE MOUNT MODULE,CS3

5

BAT 17-05W H6327

BAT 17-05W H6327

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

12000

MMDL301T1

MMDL301T1

DIODE SCHOTTKY 200MW 30V SOD-323

36000

SMP1307-027LF

SMP1307-027LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOT5

563

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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