Diodes - RF

Image Part Number Description / PDF Quantity Rfq
SMP1345-004LF

SMP1345-004LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SOT23-3

118524000

BA595E6359HTMA1

BA595E6359HTMA1

IR (Infineon Technologies)

RF PIN DIODE > ANTENNA SWITCH

0

MMP7066-11

MMP7066-11

Metelics (MACOM Technology Solutions)

DIE, DIODE, PIN

400

JDP2S02ACT(TPL3)

JDP2S02ACT(TPL3)

Toshiba Electronic Devices and Storage Corporation

RF DIODE PIN 30V CST2

2740

BAS70-06E6433

BAS70-06E6433

IR (Infineon Technologies)

SCHOTTKY DIODE - HIGH SPEED SWIT

20000

MA4P504-255

MA4P504-255

Metelics (MACOM Technology Solutions)

DIODE,PIN,STRIPLINE

100

BAS70E6327

BAS70E6327

IR (Infineon Technologies)

BAS70 - HIGH SPEED SWITCHING, CL

150500

MSWSE-005-10S

MSWSE-005-10S

Metelics (MACOM Technology Solutions)

SWITCH,RF,DFN-0402 PKG

500

MSS39-144-B10B

MSS39-144-B10B

Metelics (MACOM Technology Solutions)

COM SCHOTTKY, BEAMLEAD, B10B

75

MA4L401-1056

MA4L401-1056

Metelics (MACOM Technology Solutions)

DIODE,PIN,BONDED,STRIPLINE,SI

99

CPH5512-TL-E

CPH5512-TL-E

PIN DIODE

15000

MA144769-287T

MA144769-287T

Metelics (MACOM Technology Solutions)

DIODE,VARACTOR,SI PLASTIC

2147483647

MADP-000234-10720T

MADP-000234-10720T

Metelics (MACOM Technology Solutions)

PIN, MELF, TAPE & REEL

1486

MADL-011052-14280W

MADL-011052-14280W

Metelics (MACOM Technology Solutions)

DIODE,LIMITER,CHIP

400

SMS3922-079LF

SMS3922-079LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 8V 75MW SC79

189726000

BAR6702VH6327XTSA1

BAR6702VH6327XTSA1

IR (Infineon Technologies)

RF DIODE PIN 150V 250MW SC79-2

0

MSS60-841-E45

MSS60-841-E45

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, E45-1

50

UPP1004E3/TR13

UPP1004E3/TR13

Roving Networks / Microchip Technology

RF DIODE PIN 100V 2.5W DO216

0

SMP1320-040LF

SMP1320-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 750MW 0402

2233000

MSAT-N25

MSAT-N25

Metelics (MACOM Technology Solutions)

DIODE,NIP ATTENUATOR DIODE-PACKA

200

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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