Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MA4L011-186

MA4L011-186

Metelics (MACOM Technology Solutions)

PIN B0NDED SL,ODS186

100

SMP1322-040LF

SMP1322-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SOD882

6000

MADP-007155-0287DT

MADP-007155-0287DT

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,LEADFREE

5720

MA4E2039

MA4E2039

Metelics (MACOM Technology Solutions)

DIODE,SCHOTTKY,BEAM_LEAD,GAAS,OD

4004900

SMP1331-040LF

SMP1331-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SOD882

8270

MSS39-148-B10B

MSS39-148-B10B

Metelics (MACOM Technology Solutions)

COM SCHOTTKY-BEAMLEAD, B10B

100

MSS60-444-B42

MSS60-444-B42

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, B42

150

BA792,115

BA792,115

NXP Semiconductors

DIODE BAND-SWITCHING SOD110

504000

MBD701

MBD701

MIXER DIODE

0

MSS30-148-B10B

MSS30-148-B10B

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, B10B

150200

RN152GT2R

RN152GT2R

ROHM Semiconductor

RF DIODE PIN 30V VMD2

0

SMP1322-079LF

SMP1322-079LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SC79

17113

BA479S-TR

BA479S-TR

Vishay General Semiconductor – Diodes Division

RF DIODE PIN 30V DO35

0

BAP65-05,215

BAP65-05,215

NXP Semiconductors

DIODE PIN 30V 100MA SOT-23

24000

BAT6806E6327HTSA1

BAT6806E6327HTSA1

IR (Infineon Technologies)

RF MIXER + DETECT SCHOTTKY DIODE

3000

MA4L032-1056

MA4L032-1056

Metelics (MACOM Technology Solutions)

DIODE,PIN,BONDED,STRIPLINE,SI

100

BAP70AM,115

BAP70AM,115

NXP Semiconductors

BAP70AM - PIN DIODE

13456

MMBD354LT1

MMBD354LT1

DIODE SWITCH DUAL 7V SOT23

65554

MMVL3401T1

MMVL3401T1

DIODE PIN SWITCHING 35V SOD-323

21000

1PS66SB17,115

1PS66SB17,115

Nexperia

RF DIODE SCHOTTKY 4V SOT666

10550

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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