Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MA4SPS421

MA4SPS421

Metelics (MACOM Technology Solutions)

DIODE,SILICON-GLASS,PIN,CHIP

500

MSS20-051-H27

MSS20-051-H27

Metelics (MACOM Technology Solutions)

DIODE,SCHOTTKY,BEAMLEAD, H47P

37

MA4E1339A1-1141T

MA4E1339A1-1141T

Metelics (MACOM Technology Solutions)

SCHOTTKY PLASTIC LEAD-FREE

233712000

MA4P505-131

MA4P505-131

Metelics (MACOM Technology Solutions)

RF DIODE PIN 500V DIE

100

MMBD701LT3G

MMBD701LT3G

MIXER DIODE

120000

MA4P4002F-1091T

MA4P4002F-1091T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 200V 7.5W SMD

51500

LXP1004-23-0

LXP1004-23-0

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

258

MSS50-048-C15

MSS50-048-C15

Metelics (MACOM Technology Solutions)

COM SCHOTTKY-CHIP, C15

300

LXP1002-23-2/TR

LXP1002-23-2/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

MADS-011030-14280W

MADS-011030-14280W

Metelics (MACOM Technology Solutions)

DIODE,SCHOTTKY,ZBD

300

MSS60-144-B10B

MSS60-144-B10B

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, B10B

150

MADP-007417-10720T

MADP-007417-10720T

Metelics (MACOM Technology Solutions)

DIODE,PIN,MELF

13703000

BAP65LX,315

BAP65LX,315

NXP Semiconductors

RF DIODE PIN 30V 135MW SOD2

8915

RN741VTE-17

RN741VTE-17

ROHM Semiconductor

RF DIODE PIN 50V UMD2

0

MADP-007436-0287DT

MADP-007436-0287DT

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC

299212000

BAR63-03WE6433

BAR63-03WE6433

IR (Infineon Technologies)

PIN DIODE, 50V V(BR)

7000

MA4E1339A1-287T

MA4E1339A1-287T

Metelics (MACOM Technology Solutions)

LEAD FREE SCHOTTKY SINGLE G/R PL

292327000

CLA4605-085LF

CLA4605-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 60V 1W 3QFN

8786

MPL4702-406

MPL4702-406

Roving Networks / Microchip Technology

SI LIMITER NON HERMETIC MMSM

105

MA4P7433ST-1146T

MA4P7433ST-1146T

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,LEADFREE

300012000

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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