Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
GB05MPS17-263

GB05MPS17-263

GeneSiC Semiconductor

1700V 5A TO-263-7 SIC SCHOTTKY M

969

GC20MPS12-220

GC20MPS12-220

GeneSiC Semiconductor

SIC DIODE 1200V 20A TO-220-2

429

MBRH24020

MBRH24020

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 240A D67

0

MBRH240200R

MBRH240200R

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 240A D67

0

GKR130/18

GKR130/18

GeneSiC Semiconductor

DIODE GP 1.8KV 165A DO205AA

0

MBRH20045R

MBRH20045R

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 200A D-67

26

MBRH20020

MBRH20020

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 200A D-67

0

MBRH120150

MBRH120150

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 120A D-67

0

S85M

S85M

GeneSiC Semiconductor

DIODE GEN PURP 1KV 85A DO5

0

MUR5010R

MUR5010R

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 50A DO5

208

GB20SLT12-247

GB20SLT12-247

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 20A TO247AC

0

MURH10060

MURH10060

GeneSiC Semiconductor

DIODE GEN PURP 600V 100A D-67

0

1N1206A

1N1206A

GeneSiC Semiconductor

DIODE GEN PURP 600V 12A DO4

0

MBRH240150R

MBRH240150R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 240A D67

0

MBRH200100R

MBRH200100R

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 200A D-67

0

GB02SLT12-214

GB02SLT12-214

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 2A DO214AA

0

1N3889

1N3889

GeneSiC Semiconductor

DIODE GEN PURP 50V 12A DO4

75

GB01SLT12-252

GB01SLT12-252

GeneSiC Semiconductor

DIODE SILICON 1.2KV 1A TO252

11199

FR70GR02

FR70GR02

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 70A DO5

336

MBRH24020R

MBRH24020R

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 240A D67

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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