Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
1N3768

1N3768

GeneSiC Semiconductor

DIODE GEN PURP 1KV 35A DO5

0

MBRH12045

MBRH12045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 120A D-67

0

S16Q

S16Q

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 16A DO203AA

0

1N3891

1N3891

GeneSiC Semiconductor

DIODE GEN PURP 200V 12A DO4

500

GB50SLT12-247

GB50SLT12-247

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 50A TO247AC

51

MBRH12030R

MBRH12030R

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 120A D-67

0

MBRH24035R

MBRH24035R

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 240A D67

0

MBRH12060

MBRH12060

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 120A D-67

0

MBRH20030R

MBRH20030R

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 200A D-67

0

1N2138A

1N2138A

GeneSiC Semiconductor

DIODE GEN PURP 600V 60A DO5

0

1N3210

1N3210

GeneSiC Semiconductor

DIODE GEN PURP 200V 15A DO5

45

MBRH24045

MBRH24045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 240A D67

0

S12D

S12D

GeneSiC Semiconductor

DIODE GEN PURP 200V 12A DO4

0

GC08MPS12-220

GC08MPS12-220

GeneSiC Semiconductor

SIC DIODE 1200V 8A TO-220-2

529

FR85GR02

FR85GR02

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 85A DO5

100

1N1184R

1N1184R

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 35A DO5

0

MBR8045

MBR8045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 80A DO5

53

S300Y

S300Y

GeneSiC Semiconductor

DIODE GEN PURP 1.6KV 300A DO9

21

GKN130/18

GKN130/18

GeneSiC Semiconductor

DIODE GP 1.8KV 165A DO205AA

0

MBRH12035

MBRH12035

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 120A D-67

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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