Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
S85QR

S85QR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.2KV 85A DO5

0

1N2130AR

1N2130AR

GeneSiC Semiconductor

DIODE GEN PURP REV 150V 60A DO5

75

MBRH120200

MBRH120200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 120A D-67

0

150KR40A

150KR40A

GeneSiC Semiconductor

DIODE GEN PURP 400V 150A DO205AA

0

1N1188

1N1188

GeneSiC Semiconductor

DIODE GEN PURP 400V 35A DO5

0

1N3883R

1N3883R

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 6A DO4

311

SD4145

SD4145

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 30A DO4

0

S6QR

S6QR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.2KV 6A DO4

0

1N1190

1N1190

GeneSiC Semiconductor

DIODE GEN PURP 600V 35A DO5

0

MBRH24060R

MBRH24060R

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 240A D67

0

GC02MPS12-220

GC02MPS12-220

GeneSiC Semiconductor

SIC DIODE 1200V 2A TO-220-2

1320

MBRH24035

MBRH24035

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 240A D67

0

MBR3560R

MBR3560R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 60V DO4

102

GC10MPS12-252

GC10MPS12-252

GeneSiC Semiconductor

SIC DIODE 1200V 10A TO-252-2

2114

FR12M05

FR12M05

GeneSiC Semiconductor

DIODE GEN PURP 1KV 12A DO4

0

S85VR

S85VR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.4KV 85A DO5

400

MUR2510R

MUR2510R

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 25A DO4

0

GB02SLT12-252

GB02SLT12-252

GeneSiC Semiconductor

DIODE SIC SCHKY 1.2KV 2A TO252

2950

1N3893R

1N3893R

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 12A DO4

58

GB02SHT03-46

GB02SHT03-46

GeneSiC Semiconductor

DIODE SCHOTTKY 300V 4A

97

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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