Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
MBR8045R

MBR8045R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 45V DO5

58

MBRH120200R

MBRH120200R

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 120A D-67

0

GC50MPS06-247

GC50MPS06-247

GeneSiC Semiconductor

SIC DIODE 650V 50A TO-247-2

177

GC15MPS12-247

GC15MPS12-247

GeneSiC Semiconductor

SIC DIODE 1200V 15A TO-247-2

295

S40B

S40B

GeneSiC Semiconductor

DIODE GEN PURP 100V 40A DO5

97

1N3879

1N3879

GeneSiC Semiconductor

DIODE GEN PURP 50V 6A DO4

768

MBRH200150R

MBRH200150R

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 200A D-67

0

1N1184

1N1184

GeneSiC Semiconductor

DIODE GEN PURP 100V 35A DO5

34

GD30MPS06J

GD30MPS06J

GeneSiC Semiconductor

650V 30A TO-263-7 SIC SCHOTTKY M

1000

MBRH240150

MBRH240150

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 240A D67

0

GB01SLT12-214

GB01SLT12-214

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 2.5A SMB

27287

FR30G02

FR30G02

GeneSiC Semiconductor

DIODE GEN PURP 400V 30A DO5

11

MBRH12080R

MBRH12080R

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 120A D-67

0

FR40G02

FR40G02

GeneSiC Semiconductor

DIODE GEN PURP 400V 40A DO5

161

MBRH12080

MBRH12080

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 120A D-67

0

1N1186A

1N1186A

GeneSiC Semiconductor

DIODE GEN PURP 200V 40A DO5

287

1N3892R

1N3892R

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 12A DO4

494

MUR7020

MUR7020

GeneSiC Semiconductor

DIODE GEN PURP 200V 70A DO5

0

1N1200AR

1N1200AR

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 12A DO4

0

MBRH24045R

MBRH24045R

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 240A D67

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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