Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
MBRH120100R

MBRH120100R

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 120A D-67

0

MBRH12035R

MBRH12035R

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 120A D-67

0

MBRH240200

MBRH240200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 240A D67

0

MUR5010

MUR5010

GeneSiC Semiconductor

DIODE GEN PURP 100V 50A DO5

0

1N2131A

1N2131A

GeneSiC Semiconductor

DIODE GEN PURP 200V 60A DO5

0

GB01SLT06-214

GB01SLT06-214

GeneSiC Semiconductor

DIODE SCHOTTKY 650V 1A DO214AA

2207

1N6097

1N6097

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 50A DO5

0

MBRH20030

MBRH20030

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 200A D-67

0

MBRH12060R

MBRH12060R

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 120A D-67

0

1N3671AR

1N3671AR

GeneSiC Semiconductor

DIODE GEN PURP REV 800V 12A DO4

0

MBRH24030

MBRH24030

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 240A D67

0

1N6098

1N6098

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 50A DO5

29

S16J

S16J

GeneSiC Semiconductor

DIODE GEN PURP 600V 16A DO203AA

0

1N1186R

1N1186R

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 35A DO5

0

1N1190R

1N1190R

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 35A DO5

0

SD41R

SD41R

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 30A DO4

0

1N3892

1N3892

GeneSiC Semiconductor

DIODE GEN PURP 400V 12A DO4

655

S40Q

S40Q

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 40A DO5

1

MURH7020R

MURH7020R

GeneSiC Semiconductor

DIODE GEN PURP 200V 70A D-67

0

1N1202A

1N1202A

GeneSiC Semiconductor

DIODE GEN PURP 200V 12A DO4

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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