Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
MBRH24080

MBRH24080

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 240A D67

0

MBRH20035

MBRH20035

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 200A D-67

0

MBRH12040R

MBRH12040R

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 120A D-67

49

MBRH200150

MBRH200150

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 200A D-67

0

1N1184A

1N1184A

GeneSiC Semiconductor

DIODE GEN PURP 100V 40A DO5

2

MURH7020

MURH7020

GeneSiC Semiconductor

DIODE GEN PURP 200V 70A D-67

0

1N1204A

1N1204A

GeneSiC Semiconductor

DIODE GEN PURP 400V 12A DO4

0

S12Q

S12Q

GeneSiC Semiconductor

DIODE GEN PURP 1200V 12A DO4

0

1N3673A

1N3673A

GeneSiC Semiconductor

DIODE GEN PURP 1KV 12A DO4

0

1N3673AR

1N3673AR

GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 12A DO4

17

MBRH24030R

MBRH24030R

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 240A D67

0

GB50MPS17-247

GB50MPS17-247

GeneSiC Semiconductor

SIC DIODE 1700V 50A TO-247-2

839

S85JR

S85JR

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 85A DO5

0

MBRH24060

MBRH24060

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 240A D67

0

GC50MPS12-247

GC50MPS12-247

GeneSiC Semiconductor

SIC DIODE 1200V 50A TO-247-2

315

GC20MPS12-247

GC20MPS12-247

GeneSiC Semiconductor

SIC DIODE 1200V 20A TO-247-2

153

MUR2510

MUR2510

GeneSiC Semiconductor

DIODE GEN PURP 100V 25A DO4

0

1N1206AR

1N1206AR

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 12A DO4

43

MBRH20060R

MBRH20060R

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 200A D-67

0

GB10MPS17-247

GB10MPS17-247

GeneSiC Semiconductor

SIC DIODE 1700V 10A TO-247-2

153

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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