Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
1N3210R

1N3210R

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 15A DO5

0

MBRH200100

MBRH200100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 200A D-67

0

S85Q

S85Q

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 85A DO5

36

FR85JR05

FR85JR05

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 85A DO5

55

GC10MPS12-220

GC10MPS12-220

GeneSiC Semiconductor

SIC DIODE 1200V 10A TO-220-2

409

1N1199A

1N1199A

GeneSiC Semiconductor

DIODE GEN PURP 50V 12A DO4

0

MBRH12020R

MBRH12020R

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 120A D-67

0

GC15MPS12-220

GC15MPS12-220

GeneSiC Semiconductor

SIC DIODE 1200V 15A TO-220-2

305

MBRH200200

MBRH200200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 200A D-67

0

MBRH20040

MBRH20040

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 200A D-67

0

S85J

S85J

GeneSiC Semiconductor

DIODE GEN PURP 600V 85A DO5

11

1N3883

1N3883

GeneSiC Semiconductor

DIODE GEN PURP 400V 6A DO4

804

S40KR

S40KR

GeneSiC Semiconductor

DIODE GEN PURP REV 800V 40A DO5

97

FR16K05

FR16K05

GeneSiC Semiconductor

DIODE GEN PURP 800V 16A DO4

0

FR20GR02

FR20GR02

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 20A DO5

93

SD41

SD41

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 30A DO4

0

FR30GR02

FR30GR02

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 30A DO5

246

FR85JR02

FR85JR02

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 85A DO5

22

SD4145R

SD4145R

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 30A DO4

0

FR12JR02

FR12JR02

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 12A DO4

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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