Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
1N3881R

1N3881R

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 6A DO4

695

GB02SHT01-46

GB02SHT01-46

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 4A

9

S40M

S40M

GeneSiC Semiconductor

DIODE GEN PURP 1KV 40A DO5

0

MBRH24040

MBRH24040

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 240A D67

0

MBR3540

MBR3540

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 35A DO4

0

GB05MPS17-247

GB05MPS17-247

GeneSiC Semiconductor

SIC DIODE 1700V 5A TO-247-2

0

GAP3SLT33-214

GAP3SLT33-214

GeneSiC Semiconductor

DIODE SCHOTTKY 3.3KV 300MA DO214

5448

1N4595R

1N4595R

GeneSiC Semiconductor

DIODE GEN PURP REV 1.2KV DO205AA

0

MBRH120150R

MBRH120150R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 120A D-67

0

1N1199AR

1N1199AR

GeneSiC Semiconductor

DIODE GEN PURP REV 50V 12A DO4

0

MBRH12020

MBRH12020

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 120A D-67

0

1N1190AR

1N1190AR

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 40A DO5

285

MBRH240100R

MBRH240100R

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 240A D67

0

GB25MPS17-247

GB25MPS17-247

GeneSiC Semiconductor

SIC DIODE 1700V 25A TO-247-2

105

GKN240/18

GKN240/18

GeneSiC Semiconductor

DIODE GP 1.8KV 165A DO205AB

0

1N3214

1N3214

GeneSiC Semiconductor

DIODE GEN PURP 600V 15A DO5

246

MBRH20020R

MBRH20020R

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 200A D-67

0

1N3889R

1N3889R

GeneSiC Semiconductor

DIODE GEN PURP REV 50V 12A DO4

1976

FR85G02

FR85G02

GeneSiC Semiconductor

DIODE GEN PURP 400V 85A DO5

383

S380Y

S380Y

GeneSiC Semiconductor

DIODE GEN PURP 1.6KV 380A DO205

5

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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