Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
150KR60A

150KR60A

GeneSiC Semiconductor

DIODE GEN PURP 600V 150A DO205AA

0

GC08MPS12-252

GC08MPS12-252

GeneSiC Semiconductor

SIC DIODE 1200V 8A TO-252-2

2439

1N3881

1N3881

GeneSiC Semiconductor

DIODE GEN PURP 200V 6A DO4

652

MBRH240100

MBRH240100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 240A D67

0

FR40MR05

FR40MR05

GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 40A DO5

213

MBRH12045R

MBRH12045R

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 120A D-67

0

1N2133AR

1N2133AR

GeneSiC Semiconductor

DIODE GEN PURP REV 300V 60A DO5

0

MBR7545

MBR7545

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 75A DO5

0

1N5833R

1N5833R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 30V DO5

0

1N4588

1N4588

GeneSiC Semiconductor

DIODE GEN PURP 200V 150A DO205AA

0

FR16DR02

FR16DR02

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 16A DO4

0

S6J

S6J

GeneSiC Semiconductor

DIODE GEN PURP 600V 6A DO4

0

FR40GR05

FR40GR05

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 40A DO5

0

1N4596R

1N4596R

GeneSiC Semiconductor

DIODE GEN PURP REV 1.4KV DO205AA

0

MBR6045

MBR6045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 60A DO5

0

S25QR

S25QR

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 25A DO220AA

0

GKR130/04

GKR130/04

GeneSiC Semiconductor

DIODE GEN PURP 400V 165A DO205AA

0

GKN240/16

GKN240/16

GeneSiC Semiconductor

DIODE GEN PURP 1.6KV 320A DO205

0

FR70JR05

FR70JR05

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 70A DO5

0

1N3291A

1N3291A

GeneSiC Semiconductor

DIODE GEN PURP 400V 100A DO205AA

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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