Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
S16D

S16D

GeneSiC Semiconductor

DIODE GEN PURP 200V 16A DO203AA

0

MURH10010

MURH10010

GeneSiC Semiconductor

DIODE GEN PURP 100V 100A D-67

0

1N2129A

1N2129A

GeneSiC Semiconductor

DIODE GEN PURP 100V 60A DO5

0

MBR6030R

MBR6030R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 30V DO5

0

S16B

S16B

GeneSiC Semiconductor

DIODE GEN PURP 100V 16A DO203AA

0

MBR7535

MBR7535

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 75A DO5

0

1N3671A

1N3671A

GeneSiC Semiconductor

DIODE GEN PURP 800V 12A DO4

0

S40DR

S40DR

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 40A DO5

0

FR6M05

FR6M05

GeneSiC Semiconductor

DIODE GEN PURP 1KV 6A DO4

0

FR85BR05

FR85BR05

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 85A DO5

0

1N3208

1N3208

GeneSiC Semiconductor

DIODE GEN PURP 50V 15A DO5

0

FR40BR05

FR40BR05

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 40A DO5

0

MBR3530R

MBR3530R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 30V DO4

0

FR12D02

FR12D02

GeneSiC Semiconductor

DIODE GEN PURP 200V 12A DO4

0

S70D

S70D

GeneSiC Semiconductor

DIODE GEN PURP 200V 70A DO5

0

1N3890

1N3890

GeneSiC Semiconductor

DIODE GEN PURP 100V 12A DO4

0

FR6B02

FR6B02

GeneSiC Semiconductor

DIODE GEN PURP 100V 6A DO4

0

1N5828R

1N5828R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 40V DO5

0

GKN71/12

GKN71/12

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 95A DO5

0

1N3294A

1N3294A

GeneSiC Semiconductor

DIODE GEN PURP 800V 100A DO205AA

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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