Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
MBR80100R

MBR80100R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 100V DO5

0

FR40D05

FR40D05

GeneSiC Semiconductor

DIODE GEN PURP 200V 40A DO5

0

1N3890R

1N3890R

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 12A DO4

0

FR20KR05

FR20KR05

GeneSiC Semiconductor

DIODE GEN PURP REV 800V 20A DO5

0

FR70J05

FR70J05

GeneSiC Semiconductor

DIODE GEN PURP 600V 70A DO5

0

FR6KR05

FR6KR05

GeneSiC Semiconductor

DIODE GEN PURP REV 800V 6A DO4

0

FR85K05

FR85K05

GeneSiC Semiconductor

DIODE GEN PURP 800V 85A DO5

0

FR40JR05

FR40JR05

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 40A DO5

0

FR40G05

FR40G05

GeneSiC Semiconductor

DIODE GEN PURP 400V 40A DO5

0

S380Z

S380Z

GeneSiC Semiconductor

DIODE GEN PURP 2KV 380A DO205

0

FR40DR05

FR40DR05

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 40A DO5

0

FR30JR02

FR30JR02

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 30A DO5

0

FR6BR05

FR6BR05

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 16A DO4

0

FR16B05

FR16B05

GeneSiC Semiconductor

DIODE GEN PURP 100V 16A DO4

0

FR6G02

FR6G02

GeneSiC Semiconductor

DIODE GEN PURP 400V 6A DO4

0

FR12JR05

FR12JR05

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 12A DO4

0

MBR3580

MBR3580

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 35A DO4

0

FR30DR02

FR30DR02

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 30A DO5

0

S70JR

S70JR

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 70A DO5

0

1N5831

1N5831

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 25A DO4

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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