Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
1N4588R

1N4588R

GeneSiC Semiconductor

DIODE GEN PURP 200V 150A DO205AA

0

GKN240/08

GKN240/08

GeneSiC Semiconductor

DIODE GEN PURP 800V 320A DO205AB

0

FR85J02

FR85J02

GeneSiC Semiconductor

DIODE GEN PURP 600V 85A DO5

0

FR16G02

FR16G02

GeneSiC Semiconductor

DIODE GEN PURP 400V 16A DO4

0

1N5832

1N5832

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 40A DO5

0

S40Y

S40Y

GeneSiC Semiconductor

DIODE GEN PURP 1.6KV 40A DO5

0

MUR5060

MUR5060

GeneSiC Semiconductor

DIODE GEN PURP 600V 50A DO5

0

1N6096R

1N6096R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 40V DO4

0

FR20JR02

FR20JR02

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 20A DO5

0

MBR6035R

MBR6035R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 35V DO5

0

1N6097R

1N6097R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 30V DO5

0

S70K

S70K

GeneSiC Semiconductor

DIODE GEN PURP 800V 70A DO5

0

FR85MR05

FR85MR05

GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 85A DO5

0

1N4592

1N4592

GeneSiC Semiconductor

DIODE GEN PURP 600V 150A DO205AA

0

1N3213R

1N3213R

GeneSiC Semiconductor

DIODE GEN PURP REV 500V 15A DO5

0

S25GR

S25GR

GeneSiC Semiconductor

DIODE GEN PURP 400V 25A DO220AA

0

S320J

S320J

GeneSiC Semiconductor

DIODE GEN PURP 600V 320A DO205AB

0

FR6GR02

FR6GR02

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 6A DO4

0

FR30A02

FR30A02

GeneSiC Semiconductor

DIODE GEN PURP 50V 30A DO5

0

MBR7560R

MBR7560R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 60V DO5

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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