Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
FR70BR05

FR70BR05

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 70A DO5

0

1N5826

1N5826

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 15A DO5

0

FR12D05

FR12D05

GeneSiC Semiconductor

DIODE GEN PURP 200V 12A DO4

0

MURH7040R

MURH7040R

GeneSiC Semiconductor

DIODE GEN PURP 400V 70A D-67

0

S12J

S12J

GeneSiC Semiconductor

DIODE GEN PURP 600V 12A DO4

0

FR16BR02

FR16BR02

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 16A DO4

0

1N1183A

1N1183A

GeneSiC Semiconductor

DIODE GEN PURP 50V 40A DO203AB

0

MBR7530R

MBR7530R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 30V DO5

0

MUR2520

MUR2520

GeneSiC Semiconductor

DIODE GEN PURP 200V 25A DO4

0

1N5830R

1N5830R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 25V DO4

0

FR12GR02

FR12GR02

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 12A DO4

0

1N2137AR

1N2137AR

GeneSiC Semiconductor

DIODE GEN PURP REV 500V 60A DO5

0

FR6JR05

FR6JR05

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 6A DO4

0

FR16MR05

FR16MR05

GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 16A DO4

0

MUR7020R

MUR7020R

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 70A DO5

0

FR20MR05

FR20MR05

GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 20A DO5

0

FR6B05

FR6B05

GeneSiC Semiconductor

DIODE GEN PURP 100V 16A DO4

0

1N4595

1N4595

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 150A DO205

0

FR85D02

FR85D02

GeneSiC Semiconductor

DIODE GEN PURP 200V 85A DO5

0

GE10MPS06E

GE10MPS06E

GeneSiC Semiconductor

650V 10A TO-252-2 SIC SCHOTTKY M

2500

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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