Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
1N3297A

1N3297A

GeneSiC Semiconductor

DIODE GEN PURP 1.4KV 100A DO205

0

S380YR

S380YR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.6KV DO205AB

0

S16M

S16M

GeneSiC Semiconductor

DIODE GEN PURP 1KV 16A DO203AA

0

GE06MPS06A

GE06MPS06A

GeneSiC Semiconductor

650V 6A TO-220-2 SIC SCHOTTKY MP

2000

MBR7540

MBR7540

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 75A DO5

0

FR70BR02

FR70BR02

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 70A DO5

0

1N3293AR

1N3293AR

GeneSiC Semiconductor

DIODE GEN PURP 600V 100A DO205AA

0

FR16D02

FR16D02

GeneSiC Semiconductor

DIODE GEN PURP 200V 16A DO4

0

FR30BR02

FR30BR02

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 30A DO5

0

S85Y

S85Y

GeneSiC Semiconductor

DIODE GEN PURP 1.6KV 85A DO5

0

MBR7540R

MBR7540R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 40V DO5

0

MBR3535R

MBR3535R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 35V DO4

0

GKR71/04

GKR71/04

GeneSiC Semiconductor

DIODE GEN PURP 400V 95A DO5

0

S16QR

S16QR

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 16A DO220AA

0

GE08MPS06A

GE08MPS06A

GeneSiC Semiconductor

650V 8A TO-220-2 SIC SCHOTTKY MP

2000

S380ZR

S380ZR

GeneSiC Semiconductor

DIODE GEN PURP REV 2KV DO205AB

0

FR40B02

FR40B02

GeneSiC Semiconductor

DIODE GEN PURP 100V 40A DO5

0

MBR6020R

MBR6020R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 20V DO5

0

S6K

S6K

GeneSiC Semiconductor

DIODE GEN PURP 800V 6A DO4

0

S25M

S25M

GeneSiC Semiconductor

DIODE GEN PURP 1KV 25A DO203AA

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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