Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
MUR2540

MUR2540

GeneSiC Semiconductor

DIODE GEN PURP 400V 25A DO4

0

FR70K05

FR70K05

GeneSiC Semiconductor

DIODE GEN PURP 800V 70A DO5

0

FR20M05

FR20M05

GeneSiC Semiconductor

DIODE GEN PURP 1KV 20A DO5

0

FR30D02

FR30D02

GeneSiC Semiconductor

DIODE GEN PURP 200V 30A DO5

0

MBR7560

MBR7560

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 75A DO5

0

S6JR

S6JR

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 6A DO4

0

MBR7580R

MBR7580R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 80V DO5

0

FR6K05

FR6K05

GeneSiC Semiconductor

DIODE GEN PURP 800V 6A DO4

0

S25BR

S25BR

GeneSiC Semiconductor

DIODE GEN PURP 100V 25A DO220AA

0

MBR7580

MBR7580

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 75A DO5

0

MBR75100R

MBR75100R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 100V DO5

0

1N3297AR

1N3297AR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.4KV DO205AA

0

S6KR

S6KR

GeneSiC Semiconductor

DIODE GEN PURP REV 800V 6A DO4

0

MUR2560

MUR2560

GeneSiC Semiconductor

DIODE GEN PURP 600V 25A DO4

0

MUR7040R

MUR7040R

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 70A DO5

0

S6G

S6G

GeneSiC Semiconductor

DIODE GEN PURP 400V 6A DO4

0

1N3765R

1N3765R

GeneSiC Semiconductor

DIODE GEN PURP REV 700V 35A DO5

0

1N5826R

1N5826R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 20V DO5

0

1N3882R

1N3882R

GeneSiC Semiconductor

DIODE GEN PURP REV 300V 6A DO4

0

S300J

S300J

GeneSiC Semiconductor

DIODE GEN PURP 600V 300A DO205AB

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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