Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
1N4590R

1N4590R

GeneSiC Semiconductor

DIODE GEN PURP 400V 150A DO205AA

0

FR40D02

FR40D02

GeneSiC Semiconductor

DIODE GEN PURP 200V 40A DO5

0

S85BR

S85BR

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 85A DO5

0

S25G

S25G

GeneSiC Semiconductor

DIODE GEN PURP 400V 25A DO203AA

0

1N2128AR

1N2128AR

GeneSiC Semiconductor

DIODE GEN PURP REV 50V 60A DO5

0

FR16JR05

FR16JR05

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 16A DO4

0

MBR6080

MBR6080

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 60A DO5

0

GD30MPS06H

GD30MPS06H

GeneSiC Semiconductor

650V 30A TO-247-2 SIC SCHOTTKY M

0

FR40J05

FR40J05

GeneSiC Semiconductor

DIODE GEN PURP 600V 40A DO5

0

S320QR

S320QR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.2KV DO205AB

0

FR6AR02

FR6AR02

GeneSiC Semiconductor

DIODE GEN PURP REV 50V 6A DO4

0

1N1189

1N1189

GeneSiC Semiconductor

DIODE GEN PURP 600V 35A DO5

0

MURH10020

MURH10020

GeneSiC Semiconductor

DIODE GEN PURP 200V 100A D-67

0

S85DR

S85DR

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 85A DO5

0

FR20D02

FR20D02

GeneSiC Semiconductor

DIODE GEN PURP 200V 20A DO5

0

S400Q

S400Q

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 400A DO205

0

MBR6080R

MBR6080R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 80V DO5

0

GE06MPS06E

GE06MPS06E

GeneSiC Semiconductor

650V 6A TO-252-2 SIC SCHOTTKY MP

2500

1N4590

1N4590

GeneSiC Semiconductor

DIODE GEN PURP 400V 150A DO205AA

0

MBR8060R

MBR8060R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 60V DO5

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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