Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
FR6J02

FR6J02

GeneSiC Semiconductor

DIODE GEN PURP 600V 6A DO4

0

S150Q

S150Q

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 150A DO205

0

MUR7060

MUR7060

GeneSiC Semiconductor

DIODE GEN PURP 600V 70A DO5

0

FR70D05

FR70D05

GeneSiC Semiconductor

DIODE GEN PURP 200V 70A DO5

0

S6Q

S6Q

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 6A DO4

0

MBR8020

MBR8020

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 80A DO5

0

1N1202AR

1N1202AR

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 12A DO5

0

GKN130/12

GKN130/12

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 165A DO205

0

S25D

S25D

GeneSiC Semiconductor

DIODE GEN PURP 200V 25A DO203AA

0

1N1187

1N1187

GeneSiC Semiconductor

DIODE GEN PURP 300V 35A DO5

0

MBR3520

MBR3520

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 35A DO4

0

1N1183R

1N1183R

GeneSiC Semiconductor

DIODE GEN PURP REV 50V 35A DO5

0

S40V

S40V

GeneSiC Semiconductor

DIODE GEN PURP 1.4KV 40A DO5

0

S70V

S70V

GeneSiC Semiconductor

DIODE GEN PURP 1.4KV 70A DO5

0

S40JR

S40JR

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 40A DO5

0

MUR5005R

MUR5005R

GeneSiC Semiconductor

DIODE GEN PURP REV 50V 50A DO5

0

FR85M05

FR85M05

GeneSiC Semiconductor

DIODE GEN PURP 1KV 85A DO5

0

S70J

S70J

GeneSiC Semiconductor

DIODE GEN PURP 600V 70A DO5

0

S6BR

S6BR

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 6A DO4

0

FR16DR05

FR16DR05

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 16A DO4

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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