Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
S70M

S70M

GeneSiC Semiconductor

DIODE GEN PURP 1KV 70A DO5

0

S320M

S320M

GeneSiC Semiconductor

DIODE GEN PURP 1KV 320A DO205

0

MURH10040

MURH10040

GeneSiC Semiconductor

DIODE GEN PURP 400V 100A D-67

0

FR40B05

FR40B05

GeneSiC Semiconductor

DIODE GEN PURP 100V 40A DO5

0

S25MR

S25MR

GeneSiC Semiconductor

DIODE GEN PURP 1KV 25A DO220AA

0

FR6D02

FR6D02

GeneSiC Semiconductor

DIODE GEN PURP 200V 6A DO4

0

FR12GR05

FR12GR05

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 12A DO4

0

FR20B02

FR20B02

GeneSiC Semiconductor

DIODE GEN PURP 100V 20A DO5

0

1N3212

1N3212

GeneSiC Semiconductor

DIODE GEN PURP 400V 15A DO5

0

MUR5020R

MUR5020R

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 50A DO5

0

1N1183

1N1183

GeneSiC Semiconductor

DIODE GEN PURP 50V 35A DO203AB

0

FR70DR02

FR70DR02

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 70A DO5

0

S150M

S150M

GeneSiC Semiconductor

DIODE GEN PURP 1KV 150A DO205

0

FR85GR05

FR85GR05

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 85A DO5

0

MUR2560R

MUR2560R

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 25A DO4

0

1N3289AR

1N3289AR

GeneSiC Semiconductor

DIODE GEN PURP 200V 100A DO205AA

0

FR20DR02

FR20DR02

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 20A DO5

0

MURH10020R

MURH10020R

GeneSiC Semiconductor

DIODE GEN PURP 200V 100A D-67

0

S400YR

S400YR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.6KV DO205AB

0

1N3289A

1N3289A

GeneSiC Semiconductor

DIODE GEN PURP 200V 100A DO205AA

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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