Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
MUR5005

MUR5005

GeneSiC Semiconductor

DIODE GEN PURP 50V 50A DO5

0

1N4593R

1N4593R

GeneSiC Semiconductor

DIODE GEN PURP 800V 150A DO205AA

0

FR70JR02

FR70JR02

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 70A DO5

0

S40K

S40K

GeneSiC Semiconductor

DIODE GEN PURP 800V 40A DO5

0

S85G

S85G

GeneSiC Semiconductor

DIODE GEN PURP 400V 85A DO5

0

MBR6060R

MBR6060R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 60V DO5

0

FR16GR05

FR16GR05

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 16A DO4

0

S12G

S12G

GeneSiC Semiconductor

DIODE GEN PURP 400V 12A DO4

0

MURH7010R

MURH7010R

GeneSiC Semiconductor

DIODE GEN PURP 100V 70A D-67

0

S40YR

S40YR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.6KV 40A DO5

0

FR85DR02

FR85DR02

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 85A DO5

0

FR70J02

FR70J02

GeneSiC Semiconductor

DIODE GEN PURP 600V 70A DO5

0

1N2135A

1N2135A

GeneSiC Semiconductor

DIODE GEN PURP 400V 60A DO5

0

1N3767

1N3767

GeneSiC Semiconductor

DIODE GEN PURP 900V 35A DO5

0

S300B

S300B

GeneSiC Semiconductor

DIODE GEN PURP 100V 300A DO205AB

0

GKN130/16

GKN130/16

GeneSiC Semiconductor

DIODE GEN PURP 1.6KV 165A DO205

0

1N1189R

1N1189R

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 35A DO5

0

1N3295A

1N3295A

GeneSiC Semiconductor

DIODE GEN PURP 1KV 100A DO205

0

S12QR

S12QR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.2KV 12A DO4

0

150K40A

150K40A

GeneSiC Semiconductor

DIODE GEN PURP 400V 150A DO205AA

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
RFQ BOM Call Skype Email
Top