1N3767

Manufacturer Part 1N3767
Manufacturer GeneSiC Semiconductor
Description DIODE GEN PURP 900V 35A DO5
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet 1N3767 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 10 - Dec 14 2025
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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):900 V
Current - Average Rectified (Io):35A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 35 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:10 µA @ 50 V
Capacitance @ Vr, F:-
Mounting Type:Chassis, Stud Mount
Package / Case:DO-203AB, DO-5, Stud
Supplier Device Package:DO-5
Operating Temperature - Junction:-65°C ~ 190°C
More Information
1N3767
1N3767
GeneSiC Semiconductor 1N3767 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
1N3767 PDF
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1N3768R
1N3768R
DIODE GEN PURP REV 1KV 35A DO5
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1N3736
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