Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
JTXV1N5822US

JTXV1N5822US

Semtech

SCHOTTKY SM DIODE 40V, 3A, /620

0

JTXV1N4249

JTXV1N4249

Semtech

D MET 1A STD 1000V HR

0

SCKV25K40

SCKV25K40

Semtech

DIODE GEN PURP 25KV 3A AXIAL

0

SCHJ22.5K

SCHJ22.5K

Semtech

DIODE GEN PURP 22.5KV 50MA AXIAL

0

1N3644

1N3644

Semtech

MIL, QPL PART, 0.250A. 1500V REC

0

PF0

PF0

Semtech

DIODE GEN PURP 1KV 850MA AXIAL

0

JTXV1N5806

JTXV1N5806

Semtech

D MET 2.5A SFST 150V HRV 2FFTV

0

JTXV1N5622

JTXV1N5622

Semtech

D MET 1A STD 1KV HRV

0

JTX1N4249

JTX1N4249

Semtech

D MET 1A STD 1000V HR

0

S3HVM2.5

S3HVM2.5

Semtech

DIODE GEN PURP 2.5KV 3A MODULE

0

SET121204

SET121204

Semtech

DIODE GEN PURP 400V 30A MODULE

0

ISOPAC0223

ISOPAC0223

Semtech

DIODE GEN PURP 500V 10A

0

PFF8

PFF8

Semtech

DIODE GEN PURP 800V 1A AXIAL

0

SCSFF15

SCSFF15

Semtech

DIODE GEN PURP 150V 150A

0

JTX1N5415

JTX1N5415

Semtech

D MET 3A FAST 50V HR

0

ISOPAC0111

ISOPAC0111

Semtech

DIODE GEN PURP 150V 15A

0

ISOPAC1204

ISOPAC1204

Semtech

DIODE GEN PURP 400V 15A

0

JTX1N5552US.TR

JTX1N5552US.TR

Semtech

DIODE GEN PURP 600V 5A

0

S3HVM2.5F

S3HVM2.5F

Semtech

DIODE GEN PURP 2.5KV 3A MODULE

0

SCSDF4L

SCSDF4L

Semtech

ASSY DOUBLER 50A 400V FAST REC

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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