Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
SET130112

SET130112

Semtech

DIODE GEN PURP 600V 15A MODULE

0

SM100

SM100

Semtech

DIODE GEN PURP 10KV 130MA AXIAL

0

ISOPAC0104

ISOPAC0104

Semtech

DIODE GEN PURP 400V 15A

0

SET010223

SET010223

Semtech

DIODE GEN PURP 500V 10A MODULE

0

JTX1N5554

JTX1N5554

Semtech

D MET 3A STD 1KV HR

0

SCHJ45K

SCHJ45K

Semtech

DIODE GEN PURP 45KV 50MA AXIAL

0

S1KW8C-1P

S1KW8C-1P

Semtech

DIODE GEN PURP 8KV 4A MODULE

0

SDHF5KM

SDHF5KM

Semtech

DIODE GEN PURP 5KV 1A MODULE

0

JTX1N6076

JTX1N6076

Semtech

D MET 3A SFST 50V HR

0

SCSFF15R

SCSFF15R

Semtech

DIODE GEN PURP 150V 150A

0

SCHJ15K

SCHJ15K

Semtech

DIODE GEN PURP 15KV 50MA AXIAL

0

S2KW20C-5D

S2KW20C-5D

Semtech

DIODE GEN PURP 20KV 3A MODULE

0

JTX1N5416

JTX1N5416

Semtech

D MET 3A FAST 100V HR

0

JTXV1N5554US

JTXV1N5554US

Semtech

D MET 3A STD 1KV HRV SM

0

JTXV1N6642US

JTXV1N6642US

Semtech

.3A ULTRA FAST 100V

0

JTX1N6075

JTX1N6075

Semtech

D MET 1.5A SFST 150V HR

0

JTX1N4948

JTX1N4948

Semtech

D MET 1A FAST 1KV

0

SCHS10000

SCHS10000

Semtech

DIODE GEN PURP 10KV 2A AXIAL

0

S1KW96KA-6

S1KW96KA-6

Semtech

DIODE GEN PURP 96KV 1.5A MODULE

0

SCSF1R

SCSF1R

Semtech

DIODE GEN PURP 100V 120A

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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