Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
JTXV1N5418

JTXV1N5418

Semtech

D MET 3A FAST 400V HRV

0

JTX1N4942

JTX1N4942

Semtech

D MET 1A FAST 200V HR

0

JTX1N5809

JTX1N5809

Semtech

D MET 6A SFST 100V HR

0

SCPHN30

SCPHN30

Semtech

DIODE GEN PURP 3K0V 5.5A

0

S2HVM15

S2HVM15

Semtech

DIODE GEN PURP 15KV 800MA MODULE

0

ISOPAC1211

ISOPAC1211

Semtech

DIODE GEN PURP 150V 15A

0

JTXV1N5618

JTXV1N5618

Semtech

D MET 1A STD 600V HRV

0

ISOPAC0119

ISOPAC0119

Semtech

DIODE GEN PURP 1KV 10A

0

JTXV1N4247

JTXV1N4247

Semtech

D MET 1A STD 600V

0

JTX1N3614

JTX1N3614

Semtech

D MET 1A STD 800V HR

0

SCHS12500

SCHS12500

Semtech

DIODE GEN PURP 12.5KV 2A AXIAL

0

S2KW16C-4N

S2KW16C-4N

Semtech

DIODE GEN PURP 16KV 6A MODULE

0

S25F

S25F

Semtech

DIODE GEN PURP 2.5KV 500MA AXIAL

0

SCF12500

SCF12500

Semtech

DIODE GP 12.5KV 500MA AXIAL

0

SET010112

SET010112

Semtech

DIODE GEN PURP 600V 15A MODULE

0

USC1105

USC1105

Semtech

DIODE GEN PURP 300V 2.1A AXIAL

0

SET010311

SET010311

Semtech

DIODE GEN PURP 150V 15A MODULE

0

SCF2500

SCF2500

Semtech

DIODE GEN PURP 2.5KV 500MA AXIAL

0

F25

F25

Semtech

DIODE GEN PURP 2.5KV 350MA AXIAL

0

JTX1N6078

JTX1N6078

Semtech

D MET 3A SFST 150V HR

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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