Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
JTX1N5550US

JTX1N5550US

Semtech

D MET 3A STD 200V HRV SM

0

SCH25000

SCH25000

Semtech

DIODE GP 25KV 500MA AXIAL

0

S3HVM5F

S3HVM5F

Semtech

DIODE GEN PURP 5KV 2.4A MODULE

0

JTXV1N6638

JTXV1N6638

Semtech

300MA ULTRA FAST 150V

0

SHVM15F

SHVM15F

Semtech

DIODE GEN PURP 15KV 500MA MODULE

0

S2KW16C-4D

S2KW16C-4D

Semtech

DIODE GEN PURP 16KV 3A MODULE

0

ISOPAC0103

ISOPAC0103

Semtech

DIODE GEN PURP 1KV 15A

0

USC1306

USC1306

Semtech

DIODE GEN PURP 400V 5A AXIAL

0

JTX1N6074

JTX1N6074

Semtech

D MET 1.5A SFST 100V HR

0

JTX1N5621

JTX1N5621

Semtech

D MET 1A FAST 800V HR

0

S2KW4C-1D

S2KW4C-1D

Semtech

DIODE GEN PURP 4KV 4A MODULE

0

JTXV1N6077

JTXV1N6077

Semtech

D MET 3A SFST 100V HR

0

JTX1N5552US

JTX1N5552US

Semtech

D MET 3A STD 600V HRV SM

0

1N3646

1N3646

Semtech

DIODE GEN PURP 2.5KV 600MA AXIAL

0

SCH10000

SCH10000

Semtech

DIODE GP 10KV 500MA AXIAL

0

SDH7.5K

SDH7.5K

Semtech

DIODE GEN PURP 7.5KV 400MA MOD

0

JTX1N4245

JTX1N4245

Semtech

D MET 1A STD 200V HR

0

SCHJ37.5K

SCHJ37.5K

Semtech

DIODE GEN PURP 37.5KV 50MA AXIAL

0

JTXV1N6081

JTXV1N6081

Semtech

D MET 5A SFST 150V HRV

0

JTXV1N5614

JTXV1N5614

Semtech

D MET 1A STD 200V HRV

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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