Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
JTX1N5552

JTX1N5552

Semtech

D MET 3A STD 600V HR

0

SCH5000

SCH5000

Semtech

DIODE GEN PURP 5KV 500MA AXIAL

0

JTX1N3611

JTX1N3611

Semtech

D MET 1A STD 200V HR

0

SCKV100K3

SCKV100K3

Semtech

DIODE GEN PURP 100V 2A AXIAL

0

SDH5KS

SDH5KS

Semtech

DIODE GEN PURP 5KV 2.5A MODULE

0

S20F

S20F

Semtech

DIODE GEN PURP 2KV 500MA AXIAL

0

SCH7500

SCH7500

Semtech

DIODE GEN PURP 7.5KV 500MA AXIAL

0

PFF4

PFF4

Semtech

DIODE GEN PURP 400V 700MA AXIAL

0

S2HVM10

S2HVM10

Semtech

DIODE GEN PURP 10KV 1.2A MODULE

0

JTX1N5616

JTX1N5616

Semtech

D MET 1A STD 400V HR

0

S1KW48KA-3

S1KW48KA-3

Semtech

DIODE GEN PURP 48KV 3A MODULE

0

1N5616C.TR

1N5616C.TR

Semtech

DIODE GEN PURP 400V 1A AXIAL

0

JTXV1N5807

JTXV1N5807

Semtech

D MET 6A SFST 50V HRV 6FFTV

0

S4F

S4F

Semtech

DIODE GEN PURP 400V 2A AXIAL

0

SM50

SM50

Semtech

DIODE GEN PURP 5KV 300MA AXIAL

0

SCH20000

SCH20000

Semtech

DIODE GP 20KV 500MA AXIAL

0

SET010204

SET010204

Semtech

DIODE GEN PURP 400V 15A MODULE

0

SDH10KM

SDH10KM

Semtech

DIODE GEN PURP 10KV 1A MODULE

0

JTX1N5615

JTX1N5615

Semtech

D MET 1A FAST 200V HR

0

JTX1N6643

JTX1N6643

Semtech

.3A ULTRA FAST 75V

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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