Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
SET121212

SET121212

Semtech

DIODE GEN PURP 600V 30A MODULE

0

JTX1N5554US

JTX1N5554US

Semtech

D MET 3A STD 1KV HR SM

0

3SM6

3SM6

Semtech

DIODE GEN PURP 600V 5A AXIAL

0

1N5550C.TR

1N5550C.TR

Semtech

DIODE GEN PURP 200V 5A AXIAL

0

SET061219

SET061219

Semtech

DIODE GEN PURP 1KV 20A MODULE

0

SET061204

SET061204

Semtech

DIODE GEN PURP 400V 30A MODULE

0

SCSF4R

SCSF4R

Semtech

DIODE GEN PURP 400V 120A

0

ISOPAC0212

ISOPAC0212

Semtech

DIODE GEN PURP 600V 15A

0

JTX1N5623

JTX1N5623

Semtech

D MET 1A FAST 1KV HR

0

S15F

S15F

Semtech

DIODE GEN PURP 1.5KV 500MA AXIAL

0

JTXV1N5804

JTXV1N5804

Semtech

D MET 2.5A SFST 100V HRV 2FFTV

0

JTX1N4248

JTX1N4248

Semtech

D MET 1A STD 800V HR

0

SHVM15

SHVM15

Semtech

DIODE GEN PURP 15KV 500MA MODULE

0

SM75

SM75

Semtech

DIODE GEN PURP 7.5KV 300MA AXIAL

0

JTXV1N5811US

JTXV1N5811US

Semtech

D MET 6A SFST 150V HRV SM

0

SCSM6

SCSM6

Semtech

DIODE GEN PURP 600V 150A

0

USC1106

USC1106

Semtech

DIODE GEN PURP 400V 2.1A AXIAL

0

JTXV1N5620

JTXV1N5620

Semtech

D MET 1A STD 800V HRV

0

PFF0

PFF0

Semtech

DIODE GEN PURP 1KV 1A AXIAL

0

JTX1N5806

JTX1N5806

Semtech

D MET 2.5A SFST 150V HR 2FFT

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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