Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
JTXV1N4248

JTXV1N4248

Semtech

D MET 1A STD 800V HRV

0

SCKV66K12

SCKV66K12

Semtech

DIODE GEN PURP 66KV 1.2A AXIAL

0

SCSF4

SCSF4

Semtech

DIODE GEN PURP 400V 120A

0

SCSF0

SCSF0

Semtech

DIODE GEN PURP 1KV 120A

0

ISOPAC0612

ISOPAC0612

Semtech

DIODE GEN PURP 600V 15A

0

JTX1N6642US

JTX1N6642US

Semtech

.3A ULTRA FAST 100V

0

ISOPAC0604

ISOPAC0604

Semtech

DIODE GEN PURP 400V 15A

0

SET130204

SET130204

Semtech

DIODE GEN PURP 400V 15A MODULE

0

JTXV1N6073

JTXV1N6073

Semtech

D MET 1.5A SFST 50V HR V

0

JTX1N6643US

JTX1N6643US

Semtech

.3A ULTRA FAST 75V

0

3SM2

3SM2

Semtech

DIODE GEN PURP 200V 5A AXIAL

0

SET111404

SET111404

Semtech

DIODE GEN PURP 400V 45A MODULE

0

JTX1N3612

JTX1N3612

Semtech

D MET 1A STD 400V HR

0

JTXV1N6074

JTXV1N6074

Semtech

D MET 1.5A SFST 100V HRV

0

JTXV1N5615

JTXV1N5615

Semtech

D MET 1A FAST 200V HRV

0

JTX1N6642

JTX1N6642

Semtech

.3A ULTRA FAST 100V

0

SET130312

SET130312

Semtech

DIODE GEN PURP 600V 15A MODULE

0

JTXV1N6075

JTXV1N6075

Semtech

D MET 1.5A SFST 150V HRV

0

SCF5000

SCF5000

Semtech

DIODE GEN PURP 5KV 500MA AXIAL

0

JTX1N5614

JTX1N5614

Semtech

D MET 1A STD 200V HR

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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