Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
JTXV1N6643US

JTXV1N6643US

Semtech

.3A ULTRA FAST 75V

0

JTX1N3613

JTX1N3613

Semtech

D MET 1A STD 600V HR

0

S1KW80KA-5

S1KW80KA-5

Semtech

DIODE GEN PURP 80KV 1.5A MODULE

0

S1KW16KA-1

S1KW16KA-1

Semtech

DIODE GEN PURP 16KV 2A SMD

0

SCF10000

SCF10000

Semtech

DIODE GP 10KV 500MA AXIAL

0

JTXV1N5802US

JTXV1N5802US

Semtech

D MET 2.5A SFST 50V HRV 2FFTV

0

JTX1N3957

JTX1N3957

Semtech

D MET 1A STD 1KV HR

0

ISOPAC0211

ISOPAC0211

Semtech

DIODE GEN PURP 150V 15A

0

SFF30

SFF30

Semtech

DIODE GEN PURP 3KV 360MA AXIAL

0

JTX1N5811

JTX1N5811

Semtech

D MET 6A SFST 150V HR

0

JTX1N5419

JTX1N5419

Semtech

D MET 3A FAST 500V HR

0

1N5622C.TR

1N5622C.TR

Semtech

DIODE GEN PURP 1KV 1A AXIAL

0

JTXV1N5416

JTXV1N5416

Semtech

D MET 3A FAST 100V HRV

0

S2KW24C-6D

S2KW24C-6D

Semtech

DIODE GEN PURP 24KV 3A MODULE

0

S2KW16C-4P

S2KW16C-4P

Semtech

DIODE GEN PURP 16KV 6A MODULE

0

JTX1N5551

JTX1N5551

Semtech

D MET 3A STD 400V HR

0

JTX1N6077

JTX1N6077

Semtech

D MET 3A SFST 100V HR

0

JTX1N6638US

JTX1N6638US

Semtech

.3A ULTRA FAST 115V

0

F50A

F50A

Semtech

DIODE GEN PURP 5KV 100MA AXIAL

0

JTXV1N4245

JTXV1N4245

Semtech

D MET 1A STD 200V

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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