Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
JTXV1N5802

JTXV1N5802

Semtech

D MET 2.5A SFST 50V HRV 2FFTV

0

3SM4

3SM4

Semtech

DIODE GEN PURP 400V 5A AXIAL

0

SET010212

SET010212

Semtech

DIODE GEN PURP 600V 15A MODULE

0

JTX1N4946

JTX1N4946

Semtech

D MET 1A FAST 600V HR

0

JTX1N6638

JTX1N6638

Semtech

.3A ULTRA FAST 115V

0

SHVM5F

SHVM5F

Semtech

DIODE GEN PURP 5KV 500MA MODULE

0

JTX1N5619

JTX1N5619

Semtech

D MET 1A FAST 600V HR

0

JTXV1N5553US

JTXV1N5553US

Semtech

D MET 3A STD 800V HRV SM

0

S3HVM5

S3HVM5

Semtech

DIODE GEN PURP 5KV 2.4A MODULE

0

PM6

PM6

Semtech

DIODE GEN PURP 600V 2A AXIAL

0

JTX1N5811US

JTX1N5811US

Semtech

D MET 6A SFST 150V HR SM

0

S2KW16KA-2

S2KW16KA-2

Semtech

DIODE GEN PURP 16KV 6A MODULE

0

JTXV1N5417

JTXV1N5417

Semtech

D MET 3A FAST 200V HRV

0

SCFS6000

SCFS6000

Semtech

DIODE GEN PURP 6KV 500MA AXIAL

0

SET111412

SET111412

Semtech

DIODE GEN PURP 600V 45A MODULE

0

JAN1N6643US

JAN1N6643US

Semtech

.3A ULTRA FAST 75V

0

JTXV1N5550

JTXV1N5550

Semtech

D MET 3A STD 200V HRV

0

S2KW20C-5P

S2KW20C-5P

Semtech

DIODE GEN PURP 20KV 6A MODULE

0

USC1104

USC1104

Semtech

DIODE GEN PURP 200V 2.1A AXIAL

0

JTXV1N6643

JTXV1N6643

Semtech

300MA ULTRA FAST 75V

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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