Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
JTXV1N5419

JTXV1N5419

Semtech

D MET 3A FAST 500V HRV

0

S9HVM2.5

S9HVM2.5

Semtech

DIODE GEN PURP 2.5KV 5A

0

JTX1N6079

JTX1N6079

Semtech

D MET 5A SFST 50V HR

0

1N5809US.TR

1N5809US.TR

Semtech

DIODE GEN PURP 100V 6A

0

PM8

PM8

Semtech

DIODE GEN PURP 800V 1A AXIAL

0

JTXV1N5623

JTXV1N5623

Semtech

D MET 1A FAST 1KV HRV

0

JTX1N3646

JTX1N3646

Semtech

D MET 250MA STD 2.5KV HR

0

3SM8

3SM8

Semtech

DIODE GEN PURP 800V 5A AXIAL

0

JTXV1N5551US

JTXV1N5551US

Semtech

D MET 3A STD 400V HRV

0

S2KW12C-3N

S2KW12C-3N

Semtech

DIODE GEN PURP 12KV 2A MODULE

0

S1KW32KA-2

S1KW32KA-2

Semtech

DIODE GEN PURP 3.2KV 1.5A MODULE

0

ISOPAC0203

ISOPAC0203

Semtech

DIODE GEN PURP 1KV 15A

0

JTXV1N6078

JTXV1N6078

Semtech

D MET 3A SFST 150V HRV

0

SCSM6R

SCSM6R

Semtech

DIODE GEN PURP 600V 150A

0

1N3647

1N3647

Semtech

DIODE GEN PURP 3KV 600MA AXIAL

0

JTXV1N6642

JTXV1N6642

Semtech

300MA ULTRA FAST 100V

0

JTXV1N5415

JTXV1N5415

Semtech

D MET 3A FAST 50V HRV

0

S2HVM7.5

S2HVM7.5

Semtech

DIODE GEN PURP 7.5KV 2A MODULE

0

ISOPAC1212

ISOPAC1212

Semtech

DIODE GEN PURP 600V 15A

0

S3HVM7.5

S3HVM7.5

Semtech

DIODE GEN PURP 7.5KV 1.5A MODULE

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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