Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
JTX1N5617

JTX1N5617

Semtech

D MET 1A FAST 400V HR

0

S2KW48KA-6

S2KW48KA-6

Semtech

DIODE GEN PURP 48KV 3A MODULE

0

F20

F20

Semtech

DIODE GEN PURP 2KV 350MA AXIAL

0

ISOPAC0619

ISOPAC0619

Semtech

DIODE GEN PURP 1KV 10A

0

JTX1N5620

JTX1N5620

Semtech

D MET 1A STD 800V HR

0

JTX1N5806US

JTX1N5806US

Semtech

D MET 2.5A SFST 150V HR 2FFT

0

SHVM5

SHVM5

Semtech

DIODE GEN PURP 5KV 500MA MODULE

0

JTXV1N5554

JTXV1N5554

Semtech

D MET 3A STD 1KV HRV

0

SET010111

SET010111

Semtech

DIODE GEN PURP 150V 15A MODULE

0

SCF7500

SCF7500

Semtech

DIODE GEN PURP 7.5KV 500MA AXIAL

0

SET010423

SET010423

Semtech

DIODE GEN PURP 500V 10A MODULE

0

SET010411

SET010411

Semtech

DIODE GEN PURP 150V 15A MODULE

0

JTX1N4944

JTX1N4944

Semtech

D MET 1A FAST 400V HR

0

JTX1N5551US

JTX1N5551US

Semtech

D MET 3A STD 400V HR SM

0

SET130104

SET130104

Semtech

DIODE GEN PURP 400V 15A MODULE

0

1N5620C.TR

1N5620C.TR

Semtech

DIODE GEN PURP 800V 1A AXIAL

0

S2KW4C-1P

S2KW4C-1P

Semtech

DIODE GEN PURP 4KV 8A MODULE

0

SET121219

SET121219

Semtech

DIODE GEN PURP 1KV 20A MODULE

0

SHVM10

SHVM10

Semtech

DIODE GEN PURP 10KV 500MA MODULE

0

SET111403

SET111403

Semtech

DIODE GEN PURP 1KV 45A MODULE

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
RFQ BOM Call Skype Email
Top