Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
SCFS10000

SCFS10000

Semtech

DIODE GEN PURP 10KV 1.5A AXIAL

0

JTX1N5802

JTX1N5802

Semtech

D MET 2.5A SFST 50V HR 2FFX

0

F40A

F40A

Semtech

DIODE GEN PURP 4KV 100MA AXIAL

0

S1KW8C-1N

S1KW8C-1N

Semtech

DIODE GEN PURP 8KV 4A MODULE

0

SHVM10F

SHVM10F

Semtech

DIODE GEN PURP 10KV 500MA MODULE

0

SET121203

SET121203

Semtech

DIODE GEN PURP 1KV 30A MODULE

0

ISOPAC0603

ISOPAC0603

Semtech

DIODE GEN PURP 1KV 15A

0

JTXV1N6080

JTXV1N6080

Semtech

D MET 5A SFST 100V HRV

0

S2KW32KA-4

S2KW32KA-4

Semtech

DIODE GEN PURP 3.2KV 3A MODULE

0

JTXV1N4946

JTXV1N4946

Semtech

D MET 1A STD 600V

0

SET010104

SET010104

Semtech

DIODE GEN PURP 400V 15A MODULE

0

JTX1N5807

JTX1N5807

Semtech

D MET 6A SFST 50V HR 6FFX

0

JTX1N5807US

JTX1N5807US

Semtech

D MET 6A SFST 50V HR 6FFX

0

JTXV1N5420

JTXV1N5420

Semtech

D MET 3A FAST 600V HR HRV

0

JAN1N5807

JAN1N5807

Semtech

D MET 6A SFST 50V

0

S6HVM2.5

S6HVM2.5

Semtech

DIODE GEN PURP 2.5KV 4A MODULE

0

S2KW8C-2P

S2KW8C-2P

Semtech

DIODE GEN PURP 8KV 6A MODULE

0

JTXV1N5553

JTXV1N5553

Semtech

D MET 3A STD 800V HRV

0

F60A

F60A

Semtech

DIODE GEN PURP 6KV 100MA AXIAL

0

JTX1N3644

JTX1N3644

Semtech

D MET 250MA STD 1.5KV HR

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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