Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
PFM50A

PFM50A

Semtech

DIODE GEN PURP 5KV 92MA AXIAL

0

JTX1N5802US

JTX1N5802US

Semtech

D MET 2.5A SFST 50V HR SM

0

JAN1N6080

JAN1N6080

Semtech

D MET 5A SFST 100V

0

SCHS2500

SCHS2500

Semtech

DIODE GEN PURP 2.5KV 2A AXIAL

0

SCSPF2L

SCSPF2L

Semtech

DIODE GEN PURP 200V 50A

0

SET111411

SET111411

Semtech

DIODE GEN PURP 150V 45A MODULE

0

SM25

SM25

Semtech

DIODE GEN PURP 2.5KV 600MA AXIAL

0

JTXV1N5809

JTXV1N5809

Semtech

D MET 6A SFST 100V HRV 6FFTV

0

JTXV1N5804US

JTXV1N5804US

Semtech

D MET 2.5A SFST 100V HRV 2FFTV

0

SM30

SM30

Semtech

DIODE GEN PURP 3KV 600MA AXIAL

0

JTX1N4246

JTX1N4246

Semtech

D MET 1A STD 400V HR

0

JTXV1N6638US

JTXV1N6638US

Semtech

13A ULTRA FAST 115V

0

SM40

SM40

Semtech

DIODE GEN PURP 4KV 300MA AXIAL

0

SCH12500

SCH12500

Semtech

DIODE GP 12.5KV 500MA AXIAL

0

JTX1N5809US

JTX1N5809US

Semtech

D MET 6A SFST 100V HR

0

S2HVM5

S2HVM5

Semtech

DIODE GEN PURP 5KV 2A MODULE

0

JTX1N5420

JTX1N5420

Semtech

D MET 3A FAST 600V HR

0

JTXV1N5811

JTXV1N5811

Semtech

D MET 6A SFST 150V HRV 6FFTV

0

SCFS12000

SCFS12000

Semtech

DIODE GEN PURP 12KV 1.5A AXIAL

0

SET061211

SET061211

Semtech

DIODE GEN PURP 150V 30A MODULE

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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