Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
1N5417C.TR

1N5417C.TR

Semtech

DIODE GEN PURP 200V 4.5A AXIAL

0

1N5418C.TR

1N5418C.TR

Semtech

DIODE GEN PURP 400V 4.5A AXIAL

0

1N5807US

1N5807US

Semtech

DIODE GEN PURP 50V 6A

0

1N3614

1N3614

Semtech

DIODE GEN PURP 800V 1A AXIAL

0

1N4942C.TR

1N4942C.TR

Semtech

DIODE GEN PURP 200V 1A AXIAL

0

1N5617C.TR

1N5617C.TR

Semtech

DIODE GEN PURP 400V 2A AXIAL

0

1N5811C.TR

1N5811C.TR

Semtech

DIODE GEN PURP 150V 6A AXIAL

974

1N6073

1N6073

Semtech

DIODE GEN PURP 50V 3A AXIAL

0

1N3612

1N3612

Semtech

DIODE GEN PURP 400V 1A AXIAL

0

1N5417

1N5417

Semtech

DIODE GEN PURP 200V 4.5A AXIAL

500

1N3957

1N3957

Semtech

DIODE GEN PURP 1KV 1A AXIAL

0

1N6081

1N6081

Semtech

DIODE GEN PURP 150V 5A AXIAL

0

1N5621

1N5621

Semtech

DIODE GEN PURP 800V 2A AXIAL

0

1N5554C.TR

1N5554C.TR

Semtech

DIODE GEN PURP 1KV 5A AXIAL

634

1N5552C.TR

1N5552C.TR

Semtech

DIODE GEN PURP 600V 5A AXIAL

0

JAN1N5804US

JAN1N5804US

Semtech

DIODE 1A 100V TRR 25NS

0

1N5806C.TR

1N5806C.TR

Semtech

DIODE GEN PURP 150V 2.5A AXIAL

198

JTX1N5804US

JTX1N5804US

Semtech

D MET 2.5A SFST 100V HR

0

JTXV1N4942

JTXV1N4942

Semtech

D MET 1A STD 200V

0

JTX1N6080

JTX1N6080

Semtech

D MET 5A SFST 100V HR

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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