Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
RM 11AV

RM 11AV

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1.2A AXIAL

0

RH 1CV

RH 1CV

Sanken Electric Co., Ltd.

DIODE GEN PURP 1KV 600MA AXIAL

0

RX 10ZV

RX 10ZV

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 2A AXIAL

0

EG 1AV0

EG 1AV0

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 600MA AXIAL

0

EG 1V1

EG 1V1

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 800MA AXIAL

0

AS01V

AS01V

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 600MA AXIAL

0

SJPL-D2VR

SJPL-D2VR

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1A 2SMD

0

EG01V0

EG01V0

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 700MA AXIAL

0

ES 1V1

ES 1V1

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 700MA AXIAL

0

RM 10BV

RM 10BV

Sanken Electric Co., Ltd.

DIODE GEN PURP 800V 1.2A AXIAL

0

AU02A

AU02A

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 800MA AXIAL

0

EU01V0

EU01V0

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 250MA AXIAL

0

SJPB-D9

SJPB-D9

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 90V 1A SJP

0

SJPB-D4VL

SJPB-D4VL

Sanken Electric Co., Ltd.

DIODE SCHOTTKY SMD

0

AU02AWS

AU02AWS

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 800MA AXIAL

0

RG 10AV1

RG 10AV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1A AXIAL

0

ES 1Z

ES 1Z

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 700MA AXIAL

0

EM01AV

EM01AV

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1A AXIAL

0

EU 2A

EU 2A

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1A AXIAL

0

RL 2ZV

RL 2ZV

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 2A AXIAL

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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