Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
AM01AWK

AM01AWK

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1A AXIAL

0

RU 2CV

RU 2CV

Sanken Electric Co., Ltd.

DIODE GEN PURP 1KV 800MA AXIAL

0

AP01CV

AP01CV

Sanken Electric Co., Ltd.

DIODE GEN PURP 1KV 200MA AXIAL

0

EU 2ZV1

EU 2ZV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1A AXIAL

0

ES 1FV

ES 1FV

Sanken Electric Co., Ltd.

DIODE GEN PURP 1.5KV 500MA AXIAL

0

AL01WS

AL01WS

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1A AXIAL

0

EU01ZW

EU01ZW

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 250MA AXIAL

0

AM01AWS

AM01AWS

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1A AXIAL

0

EH 1V1

EH 1V1

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 600MA AXIAL

0

SJPB-L4

SJPB-L4

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 40V 3A SJP

0

EU02ZV0

EU02ZV0

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1A AXIAL

0

SJPX-H6VL

SJPX-H6VL

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 2A 2SMD

0

AK 09WK

AK 09WK

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 90V 700MA AXIAL

0

ES01AV0

ES01AV0

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 700MA AXIAL

0

RS 1AV

RS 1AV

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 700MA AXIAL

0

ES 1

ES 1

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 700MA AXIAL

0

AP01CWS

AP01CWS

Sanken Electric Co., Ltd.

DIODE GEN PURP 1KV 200MA AXIAL

0

SJPB-H9

SJPB-H9

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 90V 2A SJP

0

AU01AWK

AU01AWK

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 500MA AXIAL

0

AU01

AU01

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 500MA AXIAL

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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