Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
SJPB-H4VL

SJPB-H4VL

Sanken Electric Co., Ltd.

DIODE SCHOTTKY SMD

0

AM01WS

AM01WS

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1A AXIAL

0

EK 09V

EK 09V

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 90V 700MA AXIAL

0

EU 1ZV

EU 1ZV

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 500MA AXIAL

0

RM 11BV

RM 11BV

Sanken Electric Co., Ltd.

DIODE GEN PURP 800V 1.2A AXIAL

0

EM 1YV1

EM 1YV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 100V 1A AXIAL

0

RU 2V1

RU 2V1

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1A AXIAL

0

RU 3BV1

RU 3BV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 800V 1.1A AXIAL

0

RU 1PV1

RU 1PV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 1KV 400MA AXIAL

0

RM 1V

RM 1V

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1A AXIAL

0

SJPA-D3VL

SJPA-D3VL

Sanken Electric Co., Ltd.

DIODE SCHOTTKY SMD

0

RU 20AV1

RU 20AV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1.5A AXIAL

0

RU 3V

RU 3V

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1.5A AXIAL

0

RU 1V1

RU 1V1

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 250MA AXIAL

0

EM 1V0

EM 1V0

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1A AXIAL

0

AU01ZWK

AU01ZWK

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 500MA AXIAL

0

AU01V

AU01V

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 500MA AXIAL

0

RM 2V

RM 2V

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1.2A AXIAL

0

EM 1ZV0

EM 1ZV0

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1A AXIAL

0

RX 10ZV1

RX 10ZV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 2A AXIAL

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
RFQ BOM Call Skype Email
Top