Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
EM01V0

EM01V0

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1A AXIAL

0

RK 39V

RK 39V

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 90V 2A AXIAL

0

EG01

EG01

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 700MA AXIAL

0

SJPA-H3VR

SJPA-H3VR

Sanken Electric Co., Ltd.

DIODE SCHOTTKY SMD

0

SJPJ-H3VL

SJPJ-H3VL

Sanken Electric Co., Ltd.

DIODE SCHOTTKY SMD

0

RO 2BV

RO 2BV

Sanken Electric Co., Ltd.

DIODE GEN PURP 800V 1.2A AXIAL

0

AM01V

AM01V

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1A AXIAL

0

AS01WK

AS01WK

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 600MA AXIAL

0

AL01WK

AL01WK

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1A AXIAL

0

EM01AW

EM01AW

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1A AXIAL

0

AB01BV

AB01BV

Sanken Electric Co., Ltd.

DIODE GEN PURP 800V 500MA AXIAL

0

EK 06V0

EK 06V0

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 60V 700MA AXIAL

0

EM01A

EM01A

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1A AXIAL

0

EU 2V

EU 2V

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1A AXIAL

0

AU02WS

AU02WS

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 800MA AXIAL

0

SJPJ-H3VR

SJPJ-H3VR

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 30V 2A SMD

0

RU 1AV

RU 1AV

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 250MA AXIAL

0

EU02V0

EU02V0

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1A AXIAL

0

RH 1ZV1

RH 1ZV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 600MA AXIAL

0

RM 2BV1

RM 2BV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 800V 1.2A AXIAL

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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