Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
AG01AV

AG01AV

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 500MA AXIAL

0

AP01C

AP01C

Sanken Electric Co., Ltd.

DIODE GEN PURP 1KV 200MA AXIAL

0

RG 10V

RG 10V

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1.2A AXIAL

0

EP01CV0

EP01CV0

Sanken Electric Co., Ltd.

DIODE GEN PURP 1KV 200MA AXIAL

0

SJPB-H9VR

SJPB-H9VR

Sanken Electric Co., Ltd.

DIODE SCHOTTKY SMD

0

SHV-02JV1

SHV-02JV1

Sanken Electric Co., Ltd.

IC RECT DIODE HV AXIAL

0

EP01CV

EP01CV

Sanken Electric Co., Ltd.

DIODE GEN PURP 1KV 200MA AXIAL

0

EG01AW

EG01AW

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 500MA AXIAL

0

RF 1AV1

RF 1AV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 600MA AXIAL

0

RF 1AV

RF 1AV

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 600MA AXIAL

0

RU 3MV1

RU 3MV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1.5A AXIAL

0

SJPL-L2VL

SJPL-L2VL

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 3A 2SMD

0

EU02ZV1

EU02ZV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1A AXIAL

0

EM01ZW

EM01ZW

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1A AXIAL

0

EU 2V1

EU 2V1

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 1A AXIAL

0

SJPJ-L3

SJPJ-L3

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 30V 3A SJP

0

EG 1V

EG 1V

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 800MA AXIAL

0

AU01AWS

AU01AWS

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 500MA AXIAL

0

EG01CV0

EG01CV0

Sanken Electric Co., Ltd.

DIODE GEN PURP 1KV 500MA AXIAL

0

RM 2ZV1

RM 2ZV1

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1.2A AXIAL

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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