Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAT54XYH

BAT54XYH

Nexperia

DIODE ARRAY SCHOTTKY 30V SC-88

1895

BAT854CW,135

BAT854CW,135

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT323

103694

PMEG3005CT,215

PMEG3005CT,215

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT23

28861

BAT754C,215

BAT754C,215

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT23

3066

BAV99,235

BAV99,235

Nexperia

DIODE ARRAY GP 100V 215MA SOT23

66587

BAS40-05,215

BAS40-05,215

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT23

7724

1PS301/ZL115

1PS301/ZL115

Nexperia

RECTIFIER DIODE

881960

BAW56,235

BAW56,235

Nexperia

DIODE ARRAY GP 90V 215MA SOT23

114655

PNE200100CPEZ

PNE200100CPEZ

Nexperia

PNE200100CPE/SOT1289B/CFP15

0

PMEG3002EEFZ

PMEG3002EEFZ

Nexperia

PMEG3002EEF/SOD972/DFN0603

0

PNE20060CPEZ

PNE20060CPEZ

Nexperia

PNE20060CPE/SOT1289B/CFP15

0

PNE20080CPEZ

PNE20080CPEZ

Nexperia

PNE20080CPE/SOT1289B/CFP15

0

BAV99S/ZLF

BAV99S/ZLF

Nexperia

DIODE ARRAY GEN PURP 100V SOT363

0

BAV99W/DG/B3F

BAV99W/DG/B3F

Nexperia

DIODE ARRAY GP 100V 150MA SC70

0

BAW56W/DG/B2,115

BAW56W/DG/B2,115

Nexperia

DIODE ARRAY GP 90V 150MA SC70

0

BAS40-05/DG/B2,235

BAS40-05/DG/B2,235

Nexperia

DIODE ARRAY SCHOTTKY 40V TO236AB

0

BAW56W/MIX

BAW56W/MIX

Nexperia

SWITCHING DIODE

0

BAV70W/SN/8F

BAV70W/SN/8F

Nexperia

DIODE ARRAY GP 100V 175MA SC70

0

BAS16VY/ZLZ

BAS16VY/ZLZ

Nexperia

DIODE ARRAY GEN PURP 100V SOT363

0

BAS16VY/ZLF

BAS16VY/ZLF

Nexperia

DIODE ARRAY GEN PURP 100V SOT363

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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