Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAV99W/MIX

BAV99W/MIX

Nexperia

SWITCHING DIODE

0

BAV99W/DG/B3,115

BAV99W/DG/B3,115

Nexperia

DIODE ARRAY GP 100V 150MA SC70

0

BAW56S/DG/B2,135

BAW56S/DG/B2,135

Nexperia

DIODE ARRAY GP 90V 250MA SOT363

0

BAW56S/DG/B3X

BAW56S/DG/B3X

Nexperia

DIODE SWITCHING SOT363

0

BAS40-05/DG/B3R

BAS40-05/DG/B3R

Nexperia

DIODE SCHOTTKY TO-236AB

0

BAV99/DG/B4VL

BAV99/DG/B4VL

Nexperia

DIODE SWITCHING TO-236AB

0

BAV99W/DG/B4F

BAV99W/DG/B4F

Nexperia

DIODE SWITCHING TO-236AB

0

BAW56W/DG/B3X

BAW56W/DG/B3X

Nexperia

DIODE SWITCHING SOT363

0

BAS40-06/ZLR

BAS40-06/ZLR

Nexperia

DIODE ARRAY SCHOTTKY 40V TO236AB

0

BAS40-05/DG/B3VL

BAS40-05/DG/B3VL

Nexperia

DIODE SCHOTTKY TO-236AB

0

BAS40-06/DG/B3R

BAS40-06/DG/B3R

Nexperia

DIODE SCHOTTKY TO-236AB

0

BAV70W/SNF

BAV70W/SNF

Nexperia

DIODE SWITCHING ARRAY SC-70

0

BAV99S/DG/B4X

BAV99S/DG/B4X

Nexperia

DIODE SWITCHING TO-236AB

0

BAV99/DG/B4R

BAV99/DG/B4R

Nexperia

DIODE SWITCHING TO-236AB

0

BAW56S/DG/B3F

BAW56S/DG/B3F

Nexperia

DIODE SWITCHING SOT363

0

BAV99/DG/B3,215

BAV99/DG/B3,215

Nexperia

DIODE ARRAY TO236AB

0

BAV99/DG/B3,235

BAV99/DG/B3,235

Nexperia

DIODE ARRAY TO236AB

0

BAV99W/DG/B4X

BAV99W/DG/B4X

Nexperia

DIODE SWITCHING TO-236AB

0

BAV70W/SNX

BAV70W/SNX

Nexperia

DIODE SWITCHING ARRAY SC-70

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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