Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAS21AVD,135

BAS21AVD,135

Nexperia

NOW NEXPERIA BAS21AVD - RECTIFIE

80000

BAV99,215

BAV99,215

Nexperia

DIODE ARRAY GP 100V 215MA SOT23

261831

BAW101,215

BAW101,215

Nexperia

DIODE ARRAY GP 300V 250MA SOT143

6830

BAS70-07,215

BAS70-07,215

Nexperia

DIODE ARRAY SCHOTTKY 70V SOT143B

36377

BAS56,235

BAS56,235

Nexperia

DIODE ARRAY GP 60V 200MA SOT143B

10083

BAS40-05W,115

BAS40-05W,115

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT323

9577

BAV23,235

BAV23,235

Nexperia

DIODE ARRAY GP 200V 225MA SOT143

16600

BAW101S,115

BAW101S,115

Nexperia

NEXPERIA BAW101S - HIGH VOLTAGE

11499

BAT854SW,115

BAT854SW,115

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT323

87488

BAV199,215

BAV199,215

Nexperia

DIODE ARRAY GP 75V 160MA SOT23

31982

BAS16VY,135

BAS16VY,135

Nexperia

DIODE ARRAY GP 100V 200MA 6TSSOP

0

BAS35,215

BAS35,215

Nexperia

DIODE ARRAY AVALANCHE 90V SOT23

7371

BAV70W,135

BAV70W,135

Nexperia

DIODE ARRAY GP 100V 175MA SOT323

0

BAT54C,215

BAT54C,215

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT23

222124

BAS40-07V,115

BAS40-07V,115

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT666

2013

BAS21AW,115

BAS21AW,115

Nexperia

DIODE ARRAY GP 250V 225MA SOT323

34682

BAT54VV,115

BAT54VV,115

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT666

22261

BAS40-05,235

BAS40-05,235

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT23

0

BAS70-04,235

BAS70-04,235

Nexperia

DIODE ARRAY SCHOTTKY 70V SOT23

12068

1PS66SB82,115

1PS66SB82,115

Nexperia

DIODE ARRAY SCHOTTKY 15V SOT666

93

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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