Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAV756S,115

BAV756S,115

Nexperia

DIODE ARRAY GP 90V 250MA 6TSSOP

3170

BAT54CW,115

BAT54CW,115

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT323

21381

BAV70M,315

BAV70M,315

Nexperia

DIODE ARRAY GP 100V 150MA SOT883

33

BAS31,215

BAS31,215

Nexperia

DIODE ARRAY AVALANCHE 90V SOT23

5390

BAS40-06,215

BAS40-06,215

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT23

8282

BAS40-04,235

BAS40-04,235

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT23

2825

BAT721A,235

BAT721A,235

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT23

9455

1PS88SB48,115

1PS88SB48,115

Nexperia

DIODE ARRAY SCHOTTKY 40V 6TSSOP

0

BAV70,215

BAV70,215

Nexperia

DIODE ARRAY GP 100V 215MA SOT23

96757

BAS40-06,235

BAS40-06,235

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT23

0

BAS16VV,115

BAS16VV,115

Nexperia

DIODE ARRAY GP 100V 200MA SOT666

100471

BAT54AW,115

BAT54AW,115

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT323

42839

BAS40-05V,115

BAS40-05V,115

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT666

15487

BAS21PGX

BAS21PGX

Nexperia

DIODE SW 250V 125MA SOT353

0

BAT160S,115

BAT160S,115

Nexperia

DIODE ARRAY SCHOTTKY 60V SOT223

6287

BAV74,215

BAV74,215

Nexperia

DIODE ARRAY GP 50V 215MA SOT23

10104

BAV70W,115

BAV70W,115

Nexperia

DIODE ARRAY GP 100V 175MA SOT323

13976

BAV70S,135

BAV70S,135

Nexperia

DIODE ARRAY GP 100V 250MA SC88

10409

PMEG6010CPA,115

PMEG6010CPA,115

Nexperia

DIODE ARRAY SCHOTTKY 60V 3HUSON

0

BAV70S,115

BAV70S,115

Nexperia

DIODE ARRAY GP 100V 250MA 6TSSOP

58897

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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