Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAV199W,115

BAV199W,115

Nexperia

DIODE ARRAY GP 75V 110MA SOT323

32602

BAV23CVL

BAV23CVL

Nexperia

DIODE ARRAY GP 200V TO236AB

0

PMEG3020CPA,115

PMEG3020CPA,115

Nexperia

DIODE ARRAY SCHOTTKY 30V 3HUSON

1208

BAV170MYL

BAV170MYL

Nexperia

DIODE ARRAY GP 75V 320MA 3DFN

0

BAT160A,115

BAT160A,115

Nexperia

DIODE ARRAY SCHOTTKY 60V SOT223

4442

BAV99W,135

BAV99W,135

Nexperia

DIODE ARRAY GP 100V 150MA SOT323

140360

BAT54XY,115

BAT54XY,115

Nexperia

DIODE ARRAY SCHOTTKY 30V 6TSSOP

174983

PMEG4005CT,215

PMEG4005CT,215

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT23

53303

BAT854SWF

BAT854SWF

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT323

6471

PMEG3002TV,115

PMEG3002TV,115

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT666

9752

BAT120A,115

BAT120A,115

Nexperia

DIODE ARRAY SCHOTTKY 25V SOT223

146

BAT54CV,115

BAT54CV,115

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT666

9219

BAV23A,215

BAV23A,215

Nexperia

DIODE ARRAY GP 200V 225MA SOT23

8630

BAW56W,115

BAW56W,115

Nexperia

DIODE ARRAY GP 90V 150MA SOT323

31262

BAS40-07,215

BAS40-07,215

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT143B

25928

PMEG4010CPASX

PMEG4010CPASX

Nexperia

DIODE SCHOTTKY 40V 1A SOT1061

6000

BAS70-06W,115

BAS70-06W,115

Nexperia

DIODE ARRAY SCHOTTKY 70V SOT323

39721

BAT74S,115

BAT74S,115

Nexperia

DIODE ARRAY SCHOTTKY 30V 6TSSOP

245

BAV99QCZ

BAV99QCZ

Nexperia

BAV99QC/SOT8009/DFN1412D-3

1520

BAS70XY,115

BAS70XY,115

Nexperia

DIODE ARRAY SCHOTTKY 70V 6TSSOP

46697

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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