Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAS40XY,115

BAS40XY,115

Nexperia

DIODE ARRAY SCHOTTKY 40V 6TSSOP

16865

BAV170QAZ

BAV170QAZ

Nexperia

DIODE HS SW 75V 180MA 3DFN1010

2

BAW56SRAZ

BAW56SRAZ

Nexperia

DIODE ARRAY GP 90V 375MA 6DFN

4409

BAS16VY,115

BAS16VY,115

Nexperia

DIODE ARRAY GP 100V 200MA 6TSSOP

62340

PMEG4010CPA,115

PMEG4010CPA,115

Nexperia

DIODE ARRAY SCHOTTKY 40V 3HUSON

3207

BAS21AVD,165

BAS21AVD,165

Nexperia

DIODE ARRAY GP 200V 200MA 6TSOP

9449

1PS70SB14,115

1PS70SB14,115

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT323

25479

BAS70VV,115

BAS70VV,115

Nexperia

DIODE ARRAY SCHOTTKY 70V SOT666

5419

BAW56QAZ

BAW56QAZ

Nexperia

DIODE HS SW 90V 180MA SOT1215

4695

BAT74S,135

BAT74S,135

Nexperia

DIODE ARRAY SCHOTTKY 30V 6TSSOP

9650

BAT754S,215

BAT754S,215

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT23

41824

BAV99QAZ

BAV99QAZ

Nexperia

DIODE HS SW 90V 170MA SOT1215

0

1PS70SB16,115

1PS70SB16,115

Nexperia

DIODE ARRAY SCHOTTKY 30V SOT323

2992

BAS31,235

BAS31,235

Nexperia

DIODE ARRAY AVALANCHE 90V SOT23

35966

BAW156,215

BAW156,215

Nexperia

DIODE ARRAY GP 75V 160MA SOT23

4741

BAS16VY,165

BAS16VY,165

Nexperia

DIODE ARRAY GP 100V 200MA 6TSSOP

9520

BAS70-05W,115

BAS70-05W,115

Nexperia

DIODE ARRAY SCHOTTKY 70V SOT323

22824

PMEG3020CPASX

PMEG3020CPASX

Nexperia

DIODE SCHOTTKY 30V 2A SOT1061

0

1PS300,115

1PS300,115

Nexperia

DIODE ARRAY GP 80V 170MA SOT323

578

BAT854CW,115

BAT854CW,115

Nexperia

DIODE ARRAY SCHOTTKY 40V SOT323

271149

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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